Title :
On the modeling of semiconductor quantum effects for circuit simulation
Author :
Felgenhauer, Frank ; Fabel, Simon ; Mathis, Wolfgang
Author_Institution :
Inst. of Electromagn. Theory & Microwave Technique, Hannover Univ., Germany
Abstract :
In this paper, we discuss the impact of quantum effects on the functionality of classical circuit concepts. To be most general we concentrate on MOS semiconductors, relying on the multiplicity of discussions in the literature. Instead of focussing on device simulations we investigate the impact of parasitic quantum effects in classical circuits built by the nano-scaled devices.
Keywords :
MOS capacitors; MOSFET; circuit simulation; elemental semiconductors; integrated circuit modelling; nanoelectronics; quantum interference devices; semiconductor device models; silicon; silicon compounds; MOS capacitors; MOS semiconductors; MOSFET; Si-SiO2; circuit simulation; device simulations; nanoscaled devices; parasitic quantum effects; semiconductor quantum effects; Circuit simulation; Computer interfaces; Current density; Electrons; Energy states; Insulation; Magnetic semiconductors; Quantum computing; Resonance; Tunneling;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392301
