Title :
Optical gain in an interband-resonant-tunneling-diode
Author :
Gelmont, Boris ; Woolard, Dwight
Author_Institution :
ECE Dept., Virginia Univ., Charlottesville, VA, USA
Abstract :
A new concept is presented for the generation of optical gain within an interband-resonant-tunneling-diode (I-RTD). Model equations are derived in terms of material and structure parameters for predicting the optical gain in an I-RTD device constructed of InAs/AlGaSb layers. Simulation results suggest that gain in this I-RTD can be 40 times larger than that of a quantum-well laser based on GaAs/AlGaAs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; resonant tunnelling diodes; semiconductor device models; InAs-AlGaSb; InAs-AlGaSb layers; interband RTD; interband-resonant-tunneling-diode; material parameters; optical gain; quantum well lasers; structure parameters; Biomedical optical imaging; Charge carrier processes; Optical pumping; Optical sensors; Pump lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392303
