Title :
Si hetero-bipolar transistor with an SiC emitter thin epitaxial base
Author :
Sugii, T. ; Yamazaki, T. ; Suzuki, K. ; Fukano, T. ; Ito, T.
Author_Institution :
Fujitsu Lab. Ltd., Kanagawa, Japan
Abstract :
A Si-based heterojunction bipolar transistor (Si-HBT) with polycrystalline SiC as a wide-bandgap emitter has been fabricated, combined with a 50-nm-thick highly doped base. The poly-SiC was used for the wide-bandgap material because of its lower growth temperature. The poly-SiC seems to be thermally more stable than amorphous or microcrystalline SiC. The resistivity of the SiC was sufficiently low. The current gain of 15, in spite of the highly doped base and lightly doped emitter, indicates that the structure has advantages over the conventional homobipolar transistor.<>
Keywords :
elemental semiconductors; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor technology; silicon; silicon compounds; 50 nm; 50-nm-thick highly doped base; Si hetero-bipolar transistor; SiC emitter; SiC-Si; current gain; heterojunction bipolar transistor; lightly doped emitter; lower growth temperature; polycrystalline SiC; resistivity; semiconductors; thin epitaxial base; wide-bandgap emitter; Bipolar transistors; Boron; Gases; Heterojunction bipolar transistors; Hydrogen; Inductors; Photonic band gap; Silicon carbide; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74366
