Nano-electromechanical transistor operated as a bi-polar current switch

In this paper, we report on nanomechanical transistors operating in the radio frequency range. Fabrication of the devices is compatible with semiconductor processing techniques of silicon-on-insulator substrates. Device operation is demonstrated at room temperature. For achieving maximal dissipation control of the mechanical quality factor Q a tuning fork resonator design has been adapted. Adjusting gate voltage parameters allows application of the transistor as a phase sensitive bi-polar current switch.