Title :
A 3.0 V 72mW 10b 100 MSample/s Nyquist-rate CMOS pipelined ADC in 0.54 mm/sup 2/
Author :
Tae-Hwan Oh ; Sang-Min Yoo ; Kyoung-Ho Moon ; Jae-Whui Kim
Author_Institution :
Samsung Electron. Co., Ltd., Gyeonggi-Do
Abstract :
A 3.0 V 10b 100 MSample/s Nyquist-rate CMOS pipelined ADC is presented. The ADC adopts a modified 1.5-bit/stage and multi-bit/stage pipelined architecture for low power consumption and small die area. The proposed operational amplifier with low parasitic capacitance reduces the power consumption and die area. This ADC achieves better than 56.3dB SDNR at 100 MSample/s for a 100MHz input frequency. It exhibits higher than 56.4dB SNDR up to 140 MSample/s for a 5MHz input frequency. The measured DNL and INL of the ADC are plusmn0.23 LSB and plusmn0.33 LSB, respectively. The ADC fabricated in a 0.13 mum CMOS technology occupies only 0.54 mm2 die area and consumes 72mW under a 3.0V supply including on-chip voltage reference circuit
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; low-power electronics; operational amplifiers; pipeline processing; 0.13 micron; 10 bit; 100 MHz; 3 V; 72 mW; CMOS pipelined ADC; Nyquist-rate ADC; die area; operational amplifier; parasitic capacitance; power consumption; voltage reference circuit; CMOS technology; Circuits; Energy consumption; Frequency conversion; High power amplifiers; Moon; Operational amplifiers; Parasitic capacitance; Pipelines; Voltage;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1692763