DocumentCode
2533643
Title
Passive mode-locking of AlGaInAs quantum well laser, modelling and experiment
Author
Bryce, A.C. ; Stolarz, P. ; Javaloyes, J. ; Hou, L. ; Sorel, M. ; Balle, S.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
515
Lastpage
516
Abstract
We have developed a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse-grained time-domain approach. The results are compared with the performance of a passively mode-locked AlGaInAs strained quantum well lasers.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; laser mode locking; quantum well lasers; semiconductor device models; AlGaInAs; coarse-grained time-domain approach; passive mode-locking; quantum well laser; semiconductor lasers; Conducting materials; Laser mode locking; Laser stability; Laser theory; Optical pulses; Optical resonators; Optical saturation; Predictive models; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343169
Filename
5343169
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