Nanoscaled double Y-branch junction operating as room temperature RF to DC rectifier

Author

Bednarz, Lukasz ; Rashmi ; Hackens, Benoit ; Boutry, Heme ; Bayot, Vincent ; Huynen, Isabelle ; Galloo, Jean-Sebastien ; Roelens, Yannick ; Bollaert, Sylvain ; Pichonat, Emanuelle ; Cappy, Alain

Author_Institution

Univ. Catholique de Louvain, Belgium

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

284

Lastpage

286

Abstract

Room temperature DC and broadband HF measurements of a double Y-branch junction are presented and discussed. Nonlinear DC characteristics of the devices at room temperature are observed and HF to DC conversion up to 20 GHz at room temperature is presented. Small-signal equivalent circuit of YBJ is proposed. The HF to DC conversion efficiency degradation is found to be due to parasitic crosstalk capacitance between the 2DEG access reservoirs of the device.

Keywords

III-V semiconductors; aluminium compounds; capacitance; crosstalk; equivalent circuits; gallium arsenide; indium compounds; nanoelectronics; rectifiers; rectifying circuits; semiconductor diodes; two-dimensional electron gas; 293 to 298 K; 2DEG access reservoirs; HF-DC conversion efficiency; InAlAs-InGaAs; broadband HF measurements; nanoscaled double Y-branch junction; nonlinear DC measurements; parasitic crosstalk capacitance; room temperature DC measurements; room temperature RF-DC rectifier; small signal equivalent circuit; Coplanar waveguides; Degradation; Electric variables measurement; Electrons; Equivalent circuits; Hafnium; Radio frequency; Rectifiers; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392326

Filename

1392326