Single crystal aluminum lines with excellent endurance against stress induced failure

Author

Hasunuma, M. ; Kaneko, H. ; Sawabe, A. ; Kawanoue, T. ; Kohanawa, Y. ; Komatsu, S. ; Miyauchi, M.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

677

Lastpage

680

Abstract

An excellent ability to withstand stress-induced failure and electromigration failure is demonstrated for single-crystal Al lines. In both single-crystal and polycrystalline Al lines, voids were surrounded by low surface energy planes, so that the shape of the voids would be affected by crystal orientation. The results suggest that single-crystal Al is a potential candidate for submicron lines in ULSIs.<>

Keywords

VLSI; aluminium; electromigration; integrated circuit technology; metallisation; reliability; ULSIs; crystal orientation; electromigration resistance; endurance against stress induced failure; single-crystal Al lines; submicron lines; surface energy planes; Aluminum; Artificial intelligence; Crystallography; Electromigration; Grain boundaries; Research and development; Semiconductor films; Shape; Stress; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74370

Filename

74370

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2533729