Single crystal aluminum lines with excellent endurance against stress induced failure

An excellent ability to withstand stress-induced failure and electromigration failure is demonstrated for single-crystal Al lines. In both single-crystal and polycrystalline Al lines, voids were surrounded by low surface energy planes, so that the shape of the voids would be affected by crystal orientation. The results suggest that single-crystal Al is a potential candidate for submicron lines in ULSIs.<>