Modeling electronic behavior of carbon nanotube junction devices

Author

Shi, Q.W. ; Chen, Jie

Author_Institution

Dept. of Phys., Univ. of Sci. & Technol. of China, Hefei, China

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

293

Lastpage

295

Abstract

In this paper, we explore the electronic transport behavior of carbon nanotube (CNT) junction coherent devices. The sample device we studied is a CTN junction subsuming of (5,5)-(9,0)-(5,5) double knee nano-metal-metal-metal (NMMM) junctions. Another consists of (6,6)-(10,0)-(6,6) double knee nano-metal-semiconductor-metal (NMSM) junctions. Key ideas in our proposed work include the effective scheme to calculate the surface Green´s function of the interfaces in coherent devices. In addition, by applying the nearest-neighbor π-orbital tight-binding model, the quantum conductances of these double knee junctions are calculated based on Landauer-Buttiker formula. Such practices allow us to gain some deep insights of coherent device constraints and mesoscopic integrated circuit characteristics, which help us to explore more complex systems in the future.

Keywords

Fermi level; Green´s function methods; carbon nanotubes; mesoscopic systems; nanotube devices; tight-binding calculations; C; Landauer-Buttiker formula; carbon nanotube junction coherent devices; coherent device constraints; double knee nanometal-metal-metal junctions; double knee nanometal-semiconductor-metal junctions; electronic transport modelling; mesoscopic integrated circuit properties; nearest-neighbor π-orbital tight-binding model; quantum conductances; surface Green function; Atomic force microscopy; Carbon nanotubes; Conductors; Electrons; Green´s function methods; Knee; Nanoscale devices; Particle scattering; Physics; Semiconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392329

Filename

1392329