Monte-Carlo modeling of ion implantation for silicon devices

Monte Carlo simulation of ion implantation in silicon is made with a modified MARLOWE program for boron and arsenic implants which are used to from n-p-n to p-n-p base regions for a bipolar transistor. Enhancements to MARLOWE include electronic energy loss treatments (both local and nonlocal), use of universal interaction potential incorporation of silicon electron density distribution, and postprocessors which allow detailed analyses of the channeling crystallography. Channeling results are presented for a 5-keV boron implant used for forming the base in an n-p-n bipolar device and for a 150-keV arsenic implant used for a p-n-p base. A review of several techniques for modeling implant damage is also presented.<>