Three-dimensional simulation of single electron transistors

Author

Fiori, G. ; Pala, M.G. ; Iannaccone, G.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Univ. degli Studi di Pisa, Italy

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

337

Lastpage

339

Abstract

We present a three-dimensional (3D) approach for the simulation of single electron transistor (SET) in which subregions with different types of confinement are present simultaneously. In particular, we have applied our model, based on the solution of the Schrodinger equation with DFT, to a split gate and a silicon on insulator (SOI) single electron transistor (SET). The solution of the Schrodinger equation with open boundary conditions has allowed us to compute the three-dimensional conductance in the linear response regime.

Keywords

Schrodinger equation; discrete Fourier transforms; electrical conductivity; elemental semiconductors; semiconductor device models; silicon-on-insulator; single electron transistors; DFT; SOI; Schrodinger equation; Si; boundary conditions; silicon on insulator; single electron transistors; three dimensional conductance; three dimensional simulation; Boundary conditions; Capacitance; Density functional theory; Eigenvalues and eigenfunctions; Nanoelectronics; Poisson equations; Schrodinger equation; Silicon on insulator technology; Single electron transistors; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392343

Filename

1392343