Title :
Diode characteristic of electrolyte-oxide-semiconductor structure for potential chemical and biological applications
Author :
Zhang, Y.L. ; Sun, G.C. ; Wu, W.G.
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Abstract :
This paper reports an abnormal diode characteristic of electrolyte-oxide-semiconductor (EOS) structure. The EOS structure is made up of an n-type silicon layer, a low-pressure-chemical-vapor-deposition SiO2 layer and an electrolyte-solution layer, from bottom to top. It shows a stable one-way electrical conductivity when external voltages are applied between the electrolyte-solution and silicon layers. Nanopillar forests are employed in the structure to improve the forward-current value. The EOS structures with different cross-sectional areas and different electrolyte-solutions e.g. in concentrations and pH values are tested, illustrating this kind of half-nanofluidic diodes has a great potential for chemical and biological applications.
Keywords :
chemical vapour deposition; nanofluidics; semiconductor diodes; semiconductor-electrolyte boundaries; silicon compounds; EOS structure; SiO2; biological application; diode characteristic; electrical conductivity; electrolyte-oxide-semiconductor structure; half-nanofluidic diode; low-pressure-chemical-vapor-deposition layer; n-type silicon layer; nanopillar forests; pH values; potential chemical; Copper; Earth Observing System; Fabrication; Nanobioscience; Semiconductor diodes; Silicon; Substrates; Diode characteristic; Electrolyte-oxide-semiconductor structure; Nanofluidic;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969450
