Diode characteristic of electrolyte-oxide-semiconductor structure for potential chemical and biological applications

Author

Zhang, Y.L. ; Sun, G.C. ; Wu, W.G.

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China

fYear

2011

fDate

5-9 June 2011

Firstpage

330

Lastpage

333

Abstract

This paper reports an abnormal diode characteristic of electrolyte-oxide-semiconductor (EOS) structure. The EOS structure is made up of an n-type silicon layer, a low-pressure-chemical-vapor-deposition SiO₂ layer and an electrolyte-solution layer, from bottom to top. It shows a stable one-way electrical conductivity when external voltages are applied between the electrolyte-solution and silicon layers. Nanopillar forests are employed in the structure to improve the forward-current value. The EOS structures with different cross-sectional areas and different electrolyte-solutions e.g. in concentrations and pH values are tested, illustrating this kind of half-nanofluidic diodes has a great potential for chemical and biological applications.

Keywords

chemical vapour deposition; nanofluidics; semiconductor diodes; semiconductor-electrolyte boundaries; silicon compounds; EOS structure; SiO₂; biological application; diode characteristic; electrical conductivity; electrolyte-oxide-semiconductor structure; half-nanofluidic diode; low-pressure-chemical-vapor-deposition layer; n-type silicon layer; nanopillar forests; pH values; potential chemical; Copper; Earth Observing System; Fabrication; Nanobioscience; Semiconductor diodes; Silicon; Substrates; Diode characteristic; Electrolyte-oxide-semiconductor structure; Nanofluidic;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969450

Filename

5969450