Title :
A two-dimensional thermal oxidation simulator using visco-elastic stress analysis
Author :
Saito, N. ; Miura, Hidekazu ; Sakata, S. ; Ikegawa, M. ; Shimizu, T. ; Masuda, H.
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Abstract :
A two-dimensional thermal oxidation process simulation program, OXSIM2D, has been developed, taking into account viscoelastic material properties. Novel models for oxidation, stress dependency, and the white ribbon effect are introduced. The proposed approach can be used to analyze SiO/sub x/ growth on Si surfaces and the change in stress in the total structure, including the Si substrate. Simulation results showed good agreement with experiments for both a LOCOS and a shallow trench structure.<>
Keywords :
oxidation; semiconductor technology; viscoelasticity; LOCOS; OXSIM2D; Si substrate; SiO/sub 2/-Si; models; shallow trench structure; stress dependency; thermal oxidation process simulation program; two-dimensional thermal oxidation simulator; visco-elastic stress analysis; viscoelastic material properties; white ribbon effect; Analytical models; Character generation; Laboratories; Laplace equations; Material properties; Mechanical engineering; Numerical models; Oxidation; Thermal engineering; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74374
