Substrate bias voltage generator controlled by CMOS inverter

By controlling the MOSFET´s threshold voltage, power reduction in CMOS VLSIs can be achieved while the operating speed of the circuits is maintained. In this paper, we propose an efficient substrate bias voltage generator with a charge-pumping circuit driven by CMOS inverters for threshold voltage control of MOSFETs. The substrate bias voltage generator can generate negative voltage of -V_DD level without threshold voltage loss of MOS transistors. The operating characteristics of the generator are also analyzed in detail by using the circuit analysis program H-SPICE