Title :
Low-temperature zero-level packaging technique using photosesitive film type PerMX polymer
Author :
Seok, S. ; Kim, J. ; Rolland, N. ; Rolland, P.A.
Author_Institution :
IEMN, CNRS, Villeneuve d´´Ascq, France
Abstract :
This paper presents a film type PerMX polymer-based low temperature zero-level packaging technique for RF devices. PerMX polymer capping technique was developed in two different types; 1) PerMX ring and PerMX membrane, 2) SU8 ring and PerMX membrane. The height of the implemented cap was 100 μm having 50 μm thick sealing ring and 50 μm thick membrane and the implemented dimensions were 1.4×1.1 mm2, 2.1×2.1 mm2 and 5.1×5.1 mm2. Firstly, the electrical parameters of PerMX were extracted from the measured S-parameter of microstrip line. The extracted dielectric constant and loss tangent of PerMX were 2.99, 0.049 at 30 GHz respectively. Also, the effect of the PerMX package on coplanar was found to be negligible insertion loss change of the packaged transmission line while its return loss is better than 20 dB at the measured frequency range.
Keywords :
S-parameters; dielectric losses; microstrip lines; microwave devices; packaging; permittivity; polymers; seals (stoppers); PerMX membrane; PerMX polymer; PerMX ring; RF device; S-parameter; SU8 ring; dielectric constant; dielectric loss tangent; electrical parameter; frequency 30 GHz; low temperature zero level packaging technique; microstrip line; photosesitive film; sealing ring; size 100 mum; size 50 mum; Coplanar waveguides; Polymers; Silicon; Substrates; Packaging; PerMX; Polymer; RF;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969463