40 Gb/s optical modulation using monolithically chain integration of semiconductor optical amplifiers (SOA) and electroabsorption modulators (EAM)

Author

Wu, Jui-Pin ; Yan, Hung-Jung ; Wu, Tsu-Hsiu ; Chiu, Yi-Jen

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2009

fDate

4-8 Oct. 2009

Firstpage

432

Lastpage

433

Abstract

A 40 Gbs/s monolithically cascaded integration of SOAs and EAMs is fabricated and demonstrated. Using cascaded SOA-integrated EAM, 20 dB high extinction ratio in 2.5 V, 13 dB optical gain is observed in such device. As low as -10 dB microwave reflection (DC to 35 GHz) is observed, leading to 40 GHz of -3 dB bandwidth and 40 Gb/s performance.

Keywords

electroabsorption; light absorption; optical modulation; semiconductor optical amplifiers; bit rate 40 Gbit/s; electroabsorption modulators; gain 13 dB; high extinction ratio; microwave reflection; monolithically cascaded integration; monolithically chain integration; optical gain; optical modulation; semiconductor optical amplifiers; voltage 2.5 V; Electrooptic modulators; Electrooptical waveguides; Extinction ratio; High speed optical techniques; Optical modulation; Optical pumping; Optical reflection; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE

Conference_Location

Belek-Antalya

ISSN

1092-8081

Print_ISBN

978-1-4244-3680-4

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2009.5343207

Filename

5343207