DocumentCode
2534428
Title
Material optimization of phosphorus-doped polycrystalline silicon germanium for miniaturized thermoelectric generator
Author
Wang, Z. ; Su, J. ; van Andel, Y. ; Nguyen, H. ; Vullers, R.J.M.
Author_Institution
Holst Centre, Imec, Eindhoven, Netherlands
fYear
2011
fDate
5-9 June 2011
Firstpage
346
Lastpage
349
Abstract
This paper reports the results of the material optimization of phosphorus-doped polycrystalline silicon germanium (poly-SiGe) for use in thermoelectric energy harvesting. The problem of high specific contact resistance is tackled by optimizing the microfabrication process and choosing a new metal stack for interconnect. Other material properties relevant to the thermoelectric energy harvesting have also been characterized and reported. Calculations show that once the optimized process flow is adopted, the output power of a micromachined high-topography thermopile can be improved by a factor of at least 6.
Keywords
Ge-Si alloys; elemental semiconductors; energy harvesting; thermoelectric conversion; thermopiles; SiGe; high specific contact resistance; material optimization; microfabrication process; micromachined high-topography thermopile; miniaturized thermoelectric generator; phosphorus-doped polycrystalline silicon germanium; thermoelectric energy harvesting; Annealing; Conductivity; Contact resistance; Materials; Metals; Temperature measurement; Thermal conductivity; SiGe; energy harvesting; thermoelectric;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location
Beijing
ISSN
Pending
Print_ISBN
978-1-4577-0157-3
Type
conf
DOI
10.1109/TRANSDUCERS.2011.5969468
Filename
5969468
Link To Document