• DocumentCode
    2534428
  • Title

    Material optimization of phosphorus-doped polycrystalline silicon germanium for miniaturized thermoelectric generator

  • Author

    Wang, Z. ; Su, J. ; van Andel, Y. ; Nguyen, H. ; Vullers, R.J.M.

  • Author_Institution
    Holst Centre, Imec, Eindhoven, Netherlands
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    346
  • Lastpage
    349
  • Abstract
    This paper reports the results of the material optimization of phosphorus-doped polycrystalline silicon germanium (poly-SiGe) for use in thermoelectric energy harvesting. The problem of high specific contact resistance is tackled by optimizing the microfabrication process and choosing a new metal stack for interconnect. Other material properties relevant to the thermoelectric energy harvesting have also been characterized and reported. Calculations show that once the optimized process flow is adopted, the output power of a micromachined high-topography thermopile can be improved by a factor of at least 6.
  • Keywords
    Ge-Si alloys; elemental semiconductors; energy harvesting; thermoelectric conversion; thermopiles; SiGe; high specific contact resistance; material optimization; microfabrication process; micromachined high-topography thermopile; miniaturized thermoelectric generator; phosphorus-doped polycrystalline silicon germanium; thermoelectric energy harvesting; Annealing; Conductivity; Contact resistance; Materials; Metals; Temperature measurement; Thermal conductivity; SiGe; energy harvesting; thermoelectric;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
  • Conference_Location
    Beijing
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0157-3
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2011.5969468
  • Filename
    5969468