DocumentCode :
2534428
Title :
Material optimization of phosphorus-doped polycrystalline silicon germanium for miniaturized thermoelectric generator
Author :
Wang, Z. ; Su, J. ; van Andel, Y. ; Nguyen, H. ; Vullers, R.J.M.
Author_Institution :
Holst Centre, Imec, Eindhoven, Netherlands
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
346
Lastpage :
349
Abstract :
This paper reports the results of the material optimization of phosphorus-doped polycrystalline silicon germanium (poly-SiGe) for use in thermoelectric energy harvesting. The problem of high specific contact resistance is tackled by optimizing the microfabrication process and choosing a new metal stack for interconnect. Other material properties relevant to the thermoelectric energy harvesting have also been characterized and reported. Calculations show that once the optimized process flow is adopted, the output power of a micromachined high-topography thermopile can be improved by a factor of at least 6.
Keywords :
Ge-Si alloys; elemental semiconductors; energy harvesting; thermoelectric conversion; thermopiles; SiGe; high specific contact resistance; material optimization; microfabrication process; micromachined high-topography thermopile; miniaturized thermoelectric generator; phosphorus-doped polycrystalline silicon germanium; thermoelectric energy harvesting; Annealing; Conductivity; Contact resistance; Materials; Metals; Temperature measurement; Thermal conductivity; SiGe; energy harvesting; thermoelectric;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969468
Filename :
5969468
Link To Document :
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