Title :
Monocrystalline thin-film waferlevel encapsulation of microsystems using Porous Silicon
Author :
Prümm, A. ; Kraft, K. -H ; Gottschling, P. ; Ahles, M. ; Armbruster, S. ; Metz, M. ; Burghartz, J.N.
Author_Institution :
Eng. Sensor Technol. Center, Robert Bosch GmbH, Reutlingen, Germany
Abstract :
A new technology for thin-film MEMS encapsulation with a monocrystalline silicon membrane is presented. The thickness of the membrane, used here, is 36 μm. It is produced on a dedicated wafer using a further development of the “Advanced Porous Silicon Membrane (APSM)” Process. The membrane wafer is attached to a MEMS wafer by glass-frit bonding. Before and during bonding the membrane is mechanically connected to its substrate by vertical anchors. Finally, the substrate is detached by cracking these anchors. The new encapsulation technology enables a very low sensor height by a hermetically sealed monocrystalline MEMS-Cap while using standard wafer bonding equipment. Hence, a cost-efficient all-purpose thin-film encapsulation is presented. We demonstrate the new encapsulation technology by a capped pressure sensor.
Keywords :
cracks; elemental semiconductors; fracture; membranes; microsensors; nanostructured materials; porous semiconductors; thin film sensors; wafer bonding; wafer level packaging; MEMS wafer; advanced porous silicon membrane process; cost efficient all-purpose thin film encapsulation; glass-frit bonding; hermetically sealed monocrystalline MEMS-cap; membrane thickness; microsystem; monocrystalline silicon membrane wafer; monocrystalline thin-film wafer level encapsulation; porous silicon; pressure sensor; standard wafer bonding equipment; thin-film MEMS encapsulation; Bonding; Cavity resonators; Encapsulation; Micromechanical devices; Silicon; Substrates; Thin-film encapsulation; monocrystalline; pressure sensor; wafer bonding; wafer level package;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969469