Direct wafer bonding of atomic layer deposited TiO2 and Al2O3 thin films

Author

Puurunen, R.L. ; Suni, T. ; Ylivaara, O. ; Kondo, H. ; Ammar, M. ; Ishida, T. ; Fujita, H. ; Bosseboeuf, A. ; Zaima, S. ; Kattelus, H.

Author_Institution

VTT Tech. Res. Centre of Finland, Espoo, Finland

fYear

2011

fDate

5-9 June 2011

Firstpage

978

Lastpage

981

Abstract

In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO₂ insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO₂, and Al₂O₃ for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

Keywords

aluminium compounds; atomic layer deposition; micromechanical devices; silicon-on-insulator; titanium compounds; wafer bonding; Al₂O₃; MEMS industry; TiO₂; atomic layer deposition; direct wafer bonding; silicon-on-insulator wafers; starting substrate; Aluminum oxide; Annealing; Bonding; Micromechanical devices; Plasmas; Silicon; Silicon on insulator technology; ALD; Al2O3; Atomic layer deposition; TiO2; silicon-on-insulator; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969474

Filename

5969474