Title :
The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor SRAM cell in ultra-low voltage applications
Author :
Nirschl, Thomas ; Henzler, Stephan ; Pacha, Christian ; Wang, Peng-Fei ; Hansch, Walter ; Georgakos, Georg ; Schmitt-Landsiedel, Doris
Author_Institution :
Inst. for Tech. Electron., Tech. Univ. Munich, Germany
Abstract :
This paper discusses the 6 transistor SRAM cell based on the complementary tunneling field effect transistors (TFET). The low voltage characteristics of the cell are presented. The static noise margin (SNM) is used to compare the TFET cell with the standard CMOS memory cell. Furthermore the sensitivity versus single-event-upset (SEU) caused by radiation is investigated.
Keywords :
SRAM chips; field effect transistors; integrated circuit noise; low-power electronics; radiation effects; tunnel transistors; SRAM cell; radiation effects; single event upset; static noise margin; tunneling field effect transistor cell; ultra-low voltage applications; CMOS technology; Doping profiles; Energy consumption; FETs; MOSFET circuits; Power supplies; Random access memory; Threshold voltage; Transistors; Tunneling;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392364
