Comb-drive III-nitride micro mirror fabricated by fast atom beam etching

Author

Wang, Y.J. ; Sasaki, T. ; Wu, T. ; Hu, F.R. ; Hane, K.

Author_Institution

Inst. of Commun. Technol., Nanjing Univ. of Posts & Telecommun., Nanjing, China

fYear

2011

fDate

5-9 June 2011

Firstpage

1324

Lastpage

1327

Abstract

We report here the fabrication of comb drive III-nitride micro mirror on an III-nitride/silicon platform. Silicon substrate is first patterned from the backside and removed by deep reactive ion etching (DRIE). III-nitride microstructures are defined on freestanding III-nitride slab by backside alignment technique and generated by fast atom beam (FAB) etching. The fabricated comb-drive III-nitride micro mirrors can operate on high resistivity silicon substrate without introducing additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility for producing III-nitride optical micro-electro-mechanical-system (MEMS) devices on an III-nitride/silicon platform.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; micro-optomechanical devices; micromirrors; optical fabrication; sputter etching; wide band gap semiconductors; GaN-AlGaN-Si; MEMS; backside alignment technique; comb drive III-nitride micromirror; deep reactive ion etching; fast atom beam etching; optical microelectromechanical system; optical rotation angle; Etching; Fingers; Mirrors; Optical device fabrication; Optical films; Silicon; Substrates; Fast atom beam etching; III-nitride; MEMS mirror;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969494

Filename

5969494