Title :
Stacked, standing wave detectors in 3D SOI-CMOS
Author :
Tejada, Francisco ; Andreou, Andreas G. ; Pouliquen, Philippe O.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
Abstract :
We report on the design of stacked standing wave detectors in a 3D SOI CMOS technology. The standing wave detector is the basic block needed to implement a die level CMOS interferometer to measure small displacements. The 3D CMOS process allows for standing wave detectors to be vertically stacked which provides directional information as well as displacement information from the interferometer. We discuss design considerations for the photodiodes and MOS amplifier
Keywords :
CMOS integrated circuits; amplifiers; displacement measurement; integrated optoelectronics; interferometers; photodetectors; photodiodes; silicon-on-insulator; standing wave meters; 3D SOI-CMOS; CMOS interferometer; MOS amplifier; photodiodes; standing wave detectors; vertically stack; CMOS process; CMOS technology; Detectors; Optical interferometry; Photodetectors; Photodiodes; Refractive index; Silicides; Silicon; Tellurium;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1692835
