Improvement in writing speed of electron beam direct-write lithography

Author

Chen, C.Y. ; Su, C.C. ; Huang, J.Y. ; Yang, J.J. ; Lin, H.Y.

Author_Institution

Micro Component Dev. Dept., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

451

Lastpage

453

Abstract

In this study, we tried a new lithography process in order to enhance the writing speed of electron beam (e-beam) direct-write lithography. Diamond like carbon (DLC) and titanium dioxide (TiO₂) thin films, which have higher secondary electrons (SE) emission coefficient, were deposited between silicon substrate and resist, respectively. In the current work, a negative chemically amplified resist, Shipley SAL601, was used, and was exposed by an electron beam recorder, Obducat, EBR200. The differences of required dose for proper e-beam exposure on each sample (including silicon bare wafer) were appeared by experiments. The results showed that the DLC and TiO₂ thin films could improve on the writing speed slightly. However, adding these thin films would deteriorate the lithographic resolution. Besides, the results of E-beam exposure on TiO₂ sample were more sensitive to post exposure baking (PEB) process.

Keywords

diamond-like carbon; electron resists; secondary electron emission; semiconductor thin films; titanium compounds; C; DLC thin films; Shipley SAL601 resist; Si; TiO₂; TiO₂ thin films; diamond like carbon thin films; electron beam direct-write lithography; electron beam exposure; lithographic resolution; negative chemically amplified resists; post exposure baking process; silicon substrate; silicon wafer; titanium dioxide thin films; writing speed; Carbon dioxide; Diamond-like carbon; Electron beams; Lithography; Resists; Semiconductor thin films; Silicon; Sputtering; Titanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392381

Filename

1392381