Title :
Proposal of Ge/SiGe five-layer asymmetric coupled quantum well for mach-zehnder modulators
Author :
Iseri, Yuji ; Arakawa, Taro ; Tada, Kunio ; Haneji, Nobuo
Author_Institution :
Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama, Japan
Abstract :
A Ge/SiGe five-layer asymmetric coupled quantum well (FACQW) for optical modulators based on phase modulation is proposed and theoretically analyzed. The FACQW is expected to exhibit large electrorefractive index change comparable to InGaAs/InAlAs FACQW.
Keywords :
Ge-Si alloys; optical modulation; phase modulation; refractive index; semiconductor quantum wells; Ge-SiGe; Mach-Zehnder modulators; asymmetric coupled quantum well; electrorefractive index; optical modulators; phase modulation; Absorption; Germanium silicon alloys; High speed optical techniques; Indium compounds; Indium gallium arsenide; Optical interconnections; Optical modulation; Phase modulation; Proposals; Silicon germanium; Germanium; Mach-Zehnder modulator; electrorefractive effect; quantum confined Stark effect;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343248
