DocumentCode
2535214
Title
Three-dimensional calculation of electronic structures in semiconductor quantum ring based artificial molecules
Author
Li, Yiming
Author_Institution
Dept. of Comput. Nanoelectron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2004
fDate
16-19 Aug. 2004
Firstpage
474
Lastpage
476
Abstract
We theoretically investigate the energy spectra of vertically coupled quantum rings (VCQRs) with a three-dimensional (3D) model under applied magnetic fields. Two interesting configurations, the disk- and the conical-shaped (DI and CO) small VCQRs are explored. The electron and hole energies are significantly dominated by the inter-distance d, which plays a crucial role in the tunable states of structures. For electrons, the energy state is with a nonperiodical transition among the lowest electron. For holes, it does also demonstrate the same behavior. The energy band gap of VCQRs oscillates nonperiodically between the lowest electron and holes states as a function of external magnetic fields. In addition, the oscillation is controlled by not only the topology of VCQR and the inner (and base) radius but also the variation of d. This investigation is constructive in studying the magneto-optical phenomena of the nanoscale semiconductor artificial molecules, in particular for the laser device applications.
Keywords
III-V semiconductors; energy gap; gallium arsenide; indium compounds; magneto-optical effects; nanostructured materials; narrow band gap semiconductors; semiconductor quantum dots; 3D model; InAs-GaAs; conical shaped vertically coupled quantum rings; disk shaped vertically coupled quantum rings; electron energy; electronic structures; energy band gap; energy spectra; hole energy; laser device applications; magnetic field effects; magneto-optical phenomena; nanoscale semiconductor artificial molecules; nonperiodic oscillation; nonperiodical transition; semiconductor quantum ring; three dimensional model; Charge carrier processes; Couplings; Electrons; Energy states; Magnetic fields; Magnetooptic devices; Photonic band gap; Quantum mechanics; Topology; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN
0-7803-8536-5
Type
conf
DOI
10.1109/NANO.2004.1392390
Filename
1392390
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