DocumentCode
2535361
Title
Inversion asymmetry effects in L-valley quantum wells
Author
Jancu, J.-M. ; Scholz, R. ; La Rocca, G.C. ; De Andrada, E. A E Silva ; Voisin, P.
Author_Institution
INFM, Scuola Normale Superiore, Pisa, Italy
fYear
2004
fDate
16-19 Aug. 2004
Firstpage
485
Lastpage
487
Abstract
We report first results of the spin-orbit coupling in GaSb/AlSb L-valley quantum well heterostructures using an improved tight-binding model. A zero-field spin splitting of L-conduction band edge exceeding 10 meV is demonstrated, which is more than one order of magnitude above typical values resulting from the Dresselhaus and Rashba terms near the zone center. The main results can be reproduced in a 4×4 k·p model including band parameters and k-linear spin splittings derived from the GaSb bulk band structure together with a coupling between the two L valleys folded onto the same point of the 2D Brillouin zone. Our results provide direct insight into L-valley heterostructures, indicating a new direction for future research on spin electronics.
Keywords
Brillouin zones; III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; k.p calculations; semiconductor quantum wells; spin-orbit interactions; tight-binding calculations; 2D Brillouin zone; Dresselhaus term; GaSb bulk band structure; GaSb-AlSb; GaSb-AlSb L-valley quantum well heterostructures; L-conduction band edge; Rashba term; inversion asymmetry effects; k-linear spin splitting; k.p model; spin electronics; spin orbit coupling; tight binding model; zero field spin splitting; zone center; Charge carrier processes; Conductors; Effective mass; Electron microscopy; Gallium arsenide; Lattices; Magnetoelectronics; Orbital calculations; Prototypes; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN
0-7803-8536-5
Type
conf
DOI
10.1109/NANO.2004.1392394
Filename
1392394
Link To Document