Controlled growth of ordered SWCNTs for the realization of multielectrode field emitter devices

The growth of single wall carbon nanotubes (SWCNTs) on selected patterned substrates is the fundamental step for the realization of many devices based on SWCNTs. In this work, we show that the growth technique based on chemical vapor deposition (CVD) is perfectly suitable for the realization of prototypal devices such as efficient field emitters. Many different characterization techniques are used to check the SWCNT growth. Scanning electron microscopy (SEM) and Raman spectroscopy are extensively used to monitor the structural properties of our samples. We characterize the field emission in our systems, and investigate the realization of lithographically patterned multilayer structures for the realization of a multielectrode device able to control the intensity of field emission.