Evaluation of gain saturation behaviour in travelling wave semiconductor amplifiers

Author

Kim, In ; Uppal, Kushant ; Dapkus, P.Daniel

Author_Institution

Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

11

Abstract

In this paper, we describe a more accurate method to calculate the gain saturation behavior in a QW semiconductor laser traveling wave amplifier. Solving the rate equation for the carrier density in its steady state condition in conjunction with the gain and recombination rate calculated using Kane-type Hamiltonian, a rigorous relation is derived for the gain saturation behavior with increasing photon density.

Keywords

carrier density; laser theory; optical saturation; optical transmitters; quantum well lasers; semiconductor device models; 1.3 mum; Kane-type Hamiltonian; QW semiconductor laser traveling wave amplifier; accurate method; carrier density; gain saturation behavior; gain saturation behaviour; laser theory; photon density; rate equation; recombination rate; steady state condition; travelling wave semiconductor amplifiers; Gain; Operational amplifiers; Optical amplifiers; Optical saturation; Photonics; Power amplifiers; Power generation; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571523

Filename

571523