Electric transport properties of single-walled carbon nanotubes functionalized by plasma ion irradiation method

Author

Jeong, G.-H. ; Izumida, T. ; Hirata, T. ; Hatakeyama, R. ; Neo, Y. ; Mimura, H. ; Omote, K. ; Kasama, Y. ; Jhang, S.-H. ; Park, Y.W.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

544

Lastpage

546

Abstract

We report experimental results of the electric transport properties of single-walled carbon nanotubes (SWNTs) functionalized by plasma ion irradiation method, where purified SWNTs and Cs-encapsulating SWNTs are used. SWNTs bundles are well dropped between source and drain electrodes of the field effect transistor (FET) configuration. Voltage-current characteristics, gate bias dependence, and measuring temperature dependence are investigated. It is found that purified SWNTs exhibit p-type semiconducting behavior. Transport measurements for Cs encapsulating individual SWNTs have also been performed, the result of which is discussed.

Keywords

caesium; carbon nanotubes; carrier density; encapsulation; field effect transistors; ion beam effects; nanotube devices; plasma materials processing; semiconductor materials; Cs-C; Cs-encapsulating SWNT; FET configuration; electric transport properties; field effect transistor configuration; gate bias dependence; p-type semiconducting properties; plasma ion irradiation method; single-walled carbon nanotubes; source-drain electrodes; temperature dependence; transport measurements; voltage-current curves; Carbon nanotubes; Electrodes; FETs; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature; Plasma transport processes; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392414

Filename

1392414