Hot carrier induced emitter junction degradation of AlGaAs/GaAs HBTs

Author

Song, Chung Kun ; Kim, Duk Young ; Kim, Do Hyun ; Choi, Jae Hoon

Author_Institution

Dept. of Electron. Eng., Dong-A Univ., Pusan, South Korea

fYear

1997

fDate

21-25 Jul 1997

Firstpage

238

Lastpage

243

Abstract

The origin of emitter-base junction degradation of AlGaAs/GaAs HBTs, which were stressed by reverse bias in the avalanche regime, was found to be hot carriers generated in the space charge region around the emitter mesa edge. The hot carriers were tunneling into the passivation nitride and trapped or generated interface states at the interface between the nitride and the extrinsic base surface. The effects of hot carriers were to increase the emitter-base junction off-set voltage and the leakage current. An empirical model of degradation with stress time was extracted

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; hot carriers; interface states; leakage currents; semiconductor device reliability; semiconductor device testing; space charge; tunnelling; AlGaAs-GaAs; AlGaAs/GaAs HBTs; avalanche regime; emitter mesa edge; emitter-base junction degradation; emitter-base junction off-set voltage; empirical model; hot carrier induced emitter junction degradation; hot carrier tunneling; interface states; leakage current; nitride extrinsic base surface interface; passivation nitride; reliability test; reverse bias stress; space charge region; stress time; Degradation; Gallium arsenide; Hot carriers; Interface states; Leakage current; Passivation; Space charge; Stress; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638240

Filename

638240