Title :
Dark current mechanisms in InxGa1-xAs1-yNy
Author :
Tan, L.J.J. ; Soong, W.S. ; Tan, S.L. ; Goh, Y.L. ; Steer, M.J. ; Ng, J.S. ; David, J.P.R. ; Marko, I.P. ; Chamings, J. ; Allam, J. ; Sweeney, S.J. ; Adams, A.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the InxGa1-xAs1-yNy material.
Keywords :
III-V semiconductors; indium compounds; photodetectors; InGaAsN; dark current mechanisms; optical telecommunication wavelengths; photo response; photodetectors; photovoltaic applications; Dark current; Diodes; Gallium arsenide; Lattices; Optical materials; Photodetectors; Photodiodes; Photonic band gap; Temperature; Tunneling;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343290
