Title :
Mixed-level modeling of squeeze film damping in MEMS: Simulation and pressure-dependent experimental validation
Author :
Niessner, M. ; Schrag, G. ; Iannacci, J. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
Abstract :
We present the first results of a systematic study of squeeze film damping (SQFD) in MEMS, in which we compare the measured and simulated quality factors of a series of specifically designed devices at varying pressure. Three models are employed to calculate the quality factor: an analytical-heuristic compact model by Veijola, a numerical mixed-mode model by Veijola and a mixed-level model by the authors of this work. At normal pressure the mixed-level model produces, with a maximum error of only 7%, the most accurate results for the specimens considered demonstrating the predictive power of this rigorously physics-based modeling approach. The Veijola models produce maximum errors of up to 38% and 84%, respectively. Versus pressure, the highest errors occur in the transition regime between the continuum and the molecular gas regime.
Keywords :
Q-factor; damping; micromechanical devices; MEMS; SQFD; Veijola models; analytical-heuristic compact model; mixed-level modeling; molecular gas; numerical mixed-mode model; physics-based modeling approach; pressure-dependent experimental validation; quality factor; squeeze film damping; Analytical models; Damping; Equations; Mathematical model; Micromechanical devices; Numerical models; Q factor; Squeeze film damping; experimental validation; modeling; rarefaction;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969575