DocumentCode :
2536136
Title :
Thin film thermal conductivity metrology using photoluminescence of quantum dots
Author :
Liu, X. ; Wu, X.M. ; Ren, T.L.
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
1408
Lastpage :
1411
Abstract :
Studying thin film thermal conduction is important in the development of many heat related sensors, actuators and microsystems. Emerging non-contact metrologies of membrane thermal conductivity show several advantages when devices are scaling down or novel materials are utilized. In this paper, a method to evaluate membrane thermal conductivity is presented using quantum dots as temperature markers. As an example, the thermal conductivity of 290nm-thick crystalline silicon thin film is measured as 106±10W/(m·K). Compared to conventional methods, the features of this method, like fine spatial resolution and non-contact temperature probe, bring the measurement robustness against ambient disturbance and the reduction on measurement system error. Furthermore, this metrology is eligible for thin films of other materials.
Keywords :
membranes; photoluminescence; quantum dots; thermal conductivity; thermal conductivity measurement; thin films; crystalline silicon thin film; heat related sensors; measurement system error; membrane thermal conductivity; microsystems; noncontact temperature probe; photoluminescence; quantum dot photoluminescence; size 290 nm; thin film thermal conductivity metrology; Conductivity; Resistance heating; Silicon; Temperature distribution; Temperature measurement; Thermal conductivity; Photoluminescence; Quantum Dot; Thermal Conductivity; Thin Film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969581
Filename :
5969581
Link To Document :
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