Title :
Study of dielectric relaxation phenomena in ultra-thin films (Langmuir-Blodgett films) by thermally stimulated electrical measurements: effect of film structure
Author :
Iwamoto, Mitsumasa ; Nakano, Kazuhito
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Univ., Japan
Abstract :
The electrical properties of CnTCNQ Langmuir-Blodgett films sandwiched between aluminum electrodes were studied using thermally stimulated electrical measurements, and both the effect of film structure and the influence of aluminum native oxide are assessed. Change in induced charge on an electrode (Δq2) was measured while heating a sample. The relation between Δq 2 and the number of deposited layers is in good agreement with a simple model based on a double layers dielectric system. Direction of the polarization in a film as deposited was determined using a photomeasurement. It was also found that Schottky conduction is the dominant mechanism for a C15TCNQ LB film with seven monolayers
Keywords :
Langmuir-Blodgett films; Schottky effect; dielectric relaxation; organic compounds; thermally stimulated currents; Langmuir-Blodgett films; Schottky conduction; dielectric relaxation phenomena; double layers dielectric system; film structure; monolayers; native oxide; photomeasurement; thermally stimulated electrical measurements; Aluminum; Charge measurement; Conductive films; Current measurement; Dielectric measurements; Electric variables measurement; Electrodes; Heating; Optical polarization; Q measurement;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of
Conference_Location :
Beijing
DOI :
10.1109/ICPADM.1988.38449
