Study of dielectric relaxation phenomena in ultra-thin films (Langmuir-Blodgett films) by thermally stimulated electrical measurements: effect of film structure

Author

Iwamoto, Mitsumasa ; Nakano, Kazuhito

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Univ., Japan

fYear

1988

fDate

12-16 Sep 1988

Firstpage

527

Abstract

The electrical properties of CnTCNQ Langmuir-Blodgett films sandwiched between aluminum electrodes were studied using thermally stimulated electrical measurements, and both the effect of film structure and the influence of aluminum native oxide are assessed. Change in induced charge on an electrode (Δq₂) was measured while heating a sample. The relation between Δq ₂ and the number of deposited layers is in good agreement with a simple model based on a double layers dielectric system. Direction of the polarization in a film as deposited was determined using a photomeasurement. It was also found that Schottky conduction is the dominant mechanism for a C₁₅TCNQ LB film with seven monolayers

Keywords

Langmuir-Blodgett films; Schottky effect; dielectric relaxation; organic compounds; thermally stimulated currents; Langmuir-Blodgett films; Schottky conduction; dielectric relaxation phenomena; double layers dielectric system; film structure; monolayers; native oxide; photomeasurement; thermally stimulated electrical measurements; Aluminum; Charge measurement; Conductive films; Current measurement; Dielectric measurements; Electric variables measurement; Electrodes; Heating; Optical polarization; Q measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1988. Proceedings., Second International Conference on Properties and Applications of

Conference_Location

Beijing

Type

conf

DOI

10.1109/ICPADM.1988.38449

Filename

38449