DocumentCode
2536495
Title
A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs overgrowth of patterned InGaP
Author
Groom, K.M. ; Stevens, B.J. ; Greenwood, P.D.L. ; Childs, D.T.D. ; Roberts, J.S. ; Kennedy, K. ; Fry, P.W. ; Hogg, R.A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
213
Lastpage
214
Abstract
We describe how novel approaches for fabrication of GaAs-based self-aligned lasers, superluminescent diodes and distributed feedback lasers provide the foundations for a toolkit for GaAs-based opto-electronic integrated circuits.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; integrated optoelectronics; superluminescent diodes; GaAs-AlGaAs; InGaP; distributed feedback lasers; opto-electronic integrated circuits; patterned InGaP; self-aligned lasers; superluminescent diodes; Distributed feedback devices; Gallium arsenide; Integrated circuit technology; Laser feedback; Optical buffering; Optical device fabrication; Quantum dot lasers; Reflectivity; Superluminescent diodes; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343320
Filename
5343320
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