• DocumentCode
    2536588
  • Title

    New double charge-pumping circuit for high-voltage generation

  • Author

    Nozaki, Masahiko ; Tangsrirar, W. ; Suzuki, Yasoji ; Yoshid, M. ; Saitoh, Shin´ichi ; Teramoto, Mitsuo ; Yamaguchi, Akira

  • Author_Institution
    Dept. of Commun. Eng., Tokai Univ., Hiratsuka City, Japan
  • fYear
    1998
  • fDate
    24-27 Nov 1998
  • Firstpage
    719
  • Lastpage
    722
  • Abstract
    We have proposed a double charge-pumping circuit composed of PMOS transistors. The circuit does not suffer from the threshold voltage loss of the PMOS transistors. Therefore, the circuit can generate a high voltage which is proportional to the number of pumping stages. Computer simulation was applied to a 24-stage circuit. As a result, the output voltage of the circuit was as high as +20 V under the condition of VDD=+ 1 V
  • Keywords
    MOS integrated circuits; electric charge; voltage multipliers; 1 V; 20 V; 24-stage circuit; HV generation; PMOS transistors; PMOSFET; double charge-pumping circuit; high-voltage generation; Charge pumps; Circuits; Clocks; Computational modeling; Large scale integration; MOS devices; MOSFETs; Nonvolatile memory; Power supplies; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
  • Conference_Location
    Chiangmai
  • Print_ISBN
    0-7803-5146-0
  • Type

    conf

  • DOI
    10.1109/APCCAS.1998.743922
  • Filename
    743922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2536588