Title :
High-speed buried tunnel junction VCSELs with high operation temperature
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
1.55-mum vertical-cavity surface-emitting lasers with reduced parasitics and superior modulation bandwidth in excess of 10-GHz at 85degC are realized. Bit-rates of 17-Gb/s are demonstrated at room temperature, and error-free 12.5-Gb/s is achieved up to 85degC.
Keywords :
semiconductor junctions; surface emitting lasers; bit rate 12.5 Gbit/s; bit rate 17 Gbit/s; internal parasitics; temperature 293 K to 298 K; temperature 85 degC; wavelength 1.55 mum; Bandwidth; Contacts; Dielectric losses; Electric resistance; Indium phosphide; Optical design; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343327
