• DocumentCode
    2536596
  • Title

    High-speed buried tunnel junction VCSELs with high operation temperature

  • Author

    Hofmann, Werner

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    803
  • Lastpage
    804
  • Abstract
    1.55-mum vertical-cavity surface-emitting lasers with reduced parasitics and superior modulation bandwidth in excess of 10-GHz at 85degC are realized. Bit-rates of 17-Gb/s are demonstrated at room temperature, and error-free 12.5-Gb/s is achieved up to 85degC.
  • Keywords
    semiconductor junctions; surface emitting lasers; bit rate 12.5 Gbit/s; bit rate 17 Gbit/s; internal parasitics; temperature 293 K to 298 K; temperature 85 degC; wavelength 1.55 mum; Bandwidth; Contacts; Dielectric losses; Electric resistance; Indium phosphide; Optical design; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343327
  • Filename
    5343327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2536596