Title :
Retinomorphic system design in three dimensional SOI-CMOS
Author :
Marwick, Miriam Adlerstein ; Andreou, Andreas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
Abstract :
Three dimensional (3D) silicon on insulator (SOI)-CMOS technology offers opportunities for integration of truly complex neuromorphic systems that do not suffer from the limitations that hinder neuron-like local connectivity in 2D CMOS technologies. In this paper, we outline the rationale for morphing neural structures into 3D SOI-CMOS systems. We discuss design challenges for mixed signal neuromorphic circuits in single tier and 3D SOI-CMOS. We also report on a SOI-CMOS compatible photodetector with photosensitivity of 30,000 (A/W), which is the highest ever reported in the literature
Keywords :
CMOS integrated circuits; integrated circuit design; neural chips; silicon-on-insulator; 3D SOI-CMOS; CMOS technology; mixed signal neuromorphic circuits; neural structures; neuromorphic systems; neuron-like local connectivity; photodetector; retinomorphic system design; silicon on insulator; Books; CMOS technology; Costs; Firewire; MOSFETs; Neuromorphics; Power dissipation; Silicon on insulator technology; Switching circuits; Very large scale integration;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1692920
