Title :
A 44-GHz 8-element phased-array SiGe HBT transmitter RFIC with an injection-locked quadrature frequency multiplier
Author :
Kim, Sunghwan ; Gudem, Prasad S. ; Larson, Lawrence E.
Author_Institution :
Center for Wireless Commun., Univ. of California San Diego, La Jolla, CA, USA
Abstract :
An 8-element 44-GHz phased-array direct up-conversion transmitter, based on a localized injection-locked quadrature oscillator, is fabricated in a SiGe HBT process. The transmitter includes an improved injection-locked quadrature frequency doubler, an LO active phase shifter, I/Q mixers, and an RF PA driver. The transmitter has approximately 20-dB conversion gain per element, continuous 360° phase-shift and a baseband I/Q bandwidth of 2.2-GHz. The maximum saturated RF output power is 2-dBm at 45-GHz. Each element consumes 450 mW. The chip size, including the pads, is 3×2.4 mm2.
Keywords :
Ge-Si alloys; III-V semiconductors; frequency multipliers; heterojunction bipolar transistors; injection locked oscillators; millimetre wave integrated circuits; mixers (circuits); phase shifters; radio transmitters; I-Q mixers; LO active phase shifter; RF PA driver; SiGe; frequency 44 GHz; frequency doubler; injection-locked quadrature frequency multiplier; phased-array HBT transmitter RFIC; Germanium silicon alloys; Heterojunction bipolar transistors; Injection-locked oscillators; Local oscillators; Mixers; Phase shifters; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Transmitters; BiCMOS; LO-path phase shifter; SiGe; millimeter-wave integrated circuits; phased-array; transmitter; up-conversion mixer;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477253
