• DocumentCode
    2537102
  • Title

    InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

  • Author

    Schlosser, Peter J. ; Hastie, Jennifer E. ; Calvez, Stephane ; Krysa, Andrey B. ; Dawson, Martin D.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    743
  • Lastpage
    744
  • Abstract
    InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.
  • Keywords
    III-V semiconductors; epitaxial growth; gallium compounds; indium compounds; optical pumping; quantum dot lasers; InP-GaInP; TEM00 emission; epitaxial growth; gain structure; optically pumped semiconductor disk laser; quantum dot semiconductor disk laser; self assembled; single transverse mode; wavelength 740 nm; Indium phosphide; Laser beams; Laser modes; Mirrors; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Thermal management; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343357
  • Filename
    5343357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2537102