Title :
GaN-based millimeter-wave monolithic integrated circuits
Author :
Schwantuschke, Dirk ; Kallfass, Ingmar ; Quay, Rüdiger ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany
Abstract :
Monolithic millimeter-wave integrated circuits based on AlGaN/GaN high electron mobility transistors have been processed in order to realize high power transmitters as well as efficient receivers operating at frequencies around 60 GHz and 77 GHz, respectively.
Keywords :
III-V semiconductors; MIMIC; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; efficient receivers; frequency 60 GHz; frequency 77 GHz; high electron mobility transistors; high power transmitters; millimeter-wave monolithic integrated circuits; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; MMICs; Power amplifiers; AlGaN/GaN power amplifier; high electron mobility transistor; monolithic millimeter-wave integrated circuit;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-1435-1
DOI :
10.1109/MIKON.2012.6233508
