DocumentCode :
2537115
Title :
Transparency current influence on the temperature dependent threshold of undoped and P-doped QD laser diodes
Author :
Ozgur, Gokhan ; Demir, Abdullah ; Deppe, Dennis G.
Author_Institution :
Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
737
Lastpage :
738
Abstract :
We show that the transparency current plays a central role in setting the temperature dependence of both undoped and p-doped quantum dot lasers. The influence of inhomogeneous broadening is also analyzed and shown to influence.
Keywords :
quantum dot lasers; semiconductor lasers; QD laser diodes; quantum dot laser diodes; temperature dependent threshold; transparency current influence; Charge carrier processes; Diode lasers; Doping; Electrons; Land surface temperature; Laser modes; Quantum dot lasers; Semiconductor process modeling; Temperature dependence; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343358
Filename :
5343358
Link To Document :
بازگشت