A 24-GHz and 60-GHz dual-band standing-wave VCO in 0.13µm CMOS process

Author

Wu, Liang ; Ng, Alan W L ; Leung, Lincoln L K ; Luong, Howard C.

Author_Institution

Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2010

fDate

23-25 May 2010

Firstpage

145

Lastpage

148

Abstract

By exploiting the intrinsic multiple oscillation modes of a standing-wave oscillator, a dual-band millimeter-wave VCO is designed. Implemented in 0.13μm CMOS with an area of 0.05mm², the VCO prototype measures a dual-band operation at 24 GHz and 60 GHz with tuning range of 10.8% and 7.2%, phase noise of -120dBc/Hz and -114dBc/Hz at 10MHz offset, power consumption of 11mW and 24mW, corresponding to FoM of -177dB and -176dB, respectively.

Keywords

CMOS integrated circuits; circuit oscillations; circuit tuning; millimetre wave integrated circuits; phase noise; voltage-controlled oscillators; CMOS process; dual-band millimeter-wave VCO; dual-band standing-wave VCO; frequency 24 GHz; frequency 60 GHz; oscillation mode; phase noise; power 11 mW; power 24 mW; power consumption; size 0.13 mum; standing-wave oscillator; tuning range; Area measurement; CMOS process; Dual band; Millimeter wave measurements; Noise measurement; Phase measurement; Power measurement; Prototypes; Tuning; Voltage-controlled oscillators; 24 GHz; 60 GHz; CMOS; Voltage controlled oscillator; dual-band; millimeter-wave; standing-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477265

Filename

5477265