• DocumentCode
    2537176
  • Title

    Advances in SiGe HBT technology in Europe

  • Author

    Rücker, H. ; Winkler, W.

  • Author_Institution
    IHP, Frankfurt, Germany
  • fYear
    2004
  • fDate
    24-27 Oct. 2004
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    Advances in SiGe HBT process technology in Europe and emerging new product application areas are discussed. High-speed bipolar and BiCMOS technologies with fT and fmax values in excess of 200 GHz have been used to realize fundamental building blocks for applications like 60 GHz wireless communications and 77 GHz automotive radar. Highly integrated SiGe MMICs for these frequency bands are within reach now.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; microwave integrated circuits; BiCMOS technology; SiGe; SiGe HBT process technology; SiGe MMIC; automotive radar; high-speed bipolar technology; wireless communications; Automotive engineering; BiCMOS integrated circuits; Europe; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Radar applications; Silicon germanium; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
  • ISSN
    1550-8781
  • Print_ISBN
    0-7803-8616-7
  • Type

    conf

  • DOI
    10.1109/CSICS.2004.1392471
  • Filename
    1392471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2537176