DocumentCode :
2537176
Title :
Advances in SiGe HBT technology in Europe
Author :
Rücker, H. ; Winkler, W.
Author_Institution :
IHP, Frankfurt, Germany
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
13
Lastpage :
16
Abstract :
Advances in SiGe HBT process technology in Europe and emerging new product application areas are discussed. High-speed bipolar and BiCMOS technologies with fT and fmax values in excess of 200 GHz have been used to realize fundamental building blocks for applications like 60 GHz wireless communications and 77 GHz automotive radar. Highly integrated SiGe MMICs for these frequency bands are within reach now.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; microwave integrated circuits; BiCMOS technology; SiGe; SiGe HBT process technology; SiGe MMIC; automotive radar; high-speed bipolar technology; wireless communications; Automotive engineering; BiCMOS integrated circuits; Europe; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Radar applications; Silicon germanium; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN :
1550-8781
Print_ISBN :
0-7803-8616-7
Type :
conf
DOI :
10.1109/CSICS.2004.1392471
Filename :
1392471
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2537176
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