DocumentCode :
2537344
Title :
Full Nyquist 4-bit ADC operating at half clock rate in InP-HBT technology
Author :
Mokhtari, Mehran ; Jensen, Joseph F. ; Kaplan, Todd ; Fields, Charles ; McLaughlin, Douglas ; Ng, Willie
Author_Institution :
HRL-Labs. LLC, Malibu, CA, USA
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
39
Lastpage :
42
Abstract :
Half clock rate 4-bit flash A/D converters have been designed and fabricated in HRL´s InP-HBT-OEIC technology. Two versions of the circuits (with and without on-board divider) have been characterized. The circuits utilize distributed resistor ladder structure to create the quantization reference voltages. Based on signal-to-noise-and-distortion measurements, the typical effective number of bits was calculated to 3.9 bits at 10 GS/S and 4.9 GHz analog input. The two circuit versions (with and without on-board divider) consume about 2.6 and 2.3 A from a single 3.4V supply respectively and allocate a total area of 3675 × 1875 μm2.
Keywords :
III-V semiconductors; analogue-digital conversion; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; 3.4 V; InP; InP-HBT technology; InP-HBT-OEIC technology; distributed resistor ladder structure; flash A-D converters; full Nyquist ADC; half clock rate; on-board divider; quantization reference voltage; signal-to-noise-and-distortion measurement; Analog-digital conversion; Circuits; Clocks; Current density; Cutoff frequency; Frequency conversion; Optoelectronic devices; Resistors; Sampling methods; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN :
1550-8781
Print_ISBN :
0-7803-8616-7
Type :
conf
DOI :
10.1109/CSICS.2004.1392479
Filename :
1392479
Link To Document :
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