Title :
Dual-band CMOS transceiver with highly integrated front-end for 450Mb/s 802.11n systems
Author :
Gross, Shai ; Maimon, Tzvi ; Cossoy, Fabian ; Ruberto, Mark ; Normatov, Georgi ; Rivkind, Alexander ; Telzhensky, Nikolay ; Banin, Rotem ; Ashckenazi, Ori ; Ben-Bassat, Assaf ; Zaguri, Sharon ; Hara, Gabriel ; Zajac, Mario ; Shahar, Nir ; Shahaf, Shay ; Y
Author_Institution :
Mobile Wireless Group, Intel Corp., Haifa, Israel
Abstract :
A 3-stream, 802.11n WLAN MIMO transceiver, with fully integrated PAs and LNAs in both 2.4GHz and 5GHz bands, and a T/R switch in the 2.4GHz band, was implemented in a standard 90nm CMOS technology. The transmitter achieves an EVM of -28dB at output power of 19dBm and 17dBm in the 2.4GHz and 5GHz bands, respectively. The transmitter power consumption per Mb of data, in 3-stream mode, is 3.7mW/Mb and 4.5mW/Mb in the 2.4GHz and 5GHz, respectively. This is four times lower comparing to the single stream (SISO) mode. The receiver NF is 4dB in both bands, and power consumption is 1.6mW/Mb and 1.7mW/Mb, in the 2.4GHz and 5GHz bands, respectively.
Keywords :
CMOS integrated circuits; MIMO communication; low noise amplifiers; power amplifiers; radio transmitters; radiofrequency integrated circuits; transceivers; wireless LAN; 3-stream mode; 802.11n WLAN MIMO transceiver; CMOS technology; T/R switch; dual-band CMOS transceiver; frequency 2.4 GHz; frequency 5 GHz; fully integrated PA; highly integrated front-end; low noise amplifier; power amplifier; power consumption; size 90 nm; transmitter; CMOS technology; Dual band; Energy consumption; MIMO; Noise measurement; Power generation; Switches; Transceivers; Transmitters; Wireless LAN; 3×3; CMOS; IEEE 802.11n; Integrated T/R switch; MIMO; RC filter; RF transceiver; WLAN; frequency synthesizer; integrated FEM; integrated LNA; integrated PA;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477280
