• DocumentCode
    2537679
  • Title

    Low threshold current operation of 1.3 µm Quantum Dots Laser with high mirror loss structure

  • Author

    Amano, Takeru ; Sugaya, T. ; Hettiarachchi, R. ; Komori, K. ; Mori, M.

  • Author_Institution
    Photonics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    670
  • Lastpage
    671
  • Abstract
    We have proposed a 1.3-mum QD stripe laser with a half-etching-mesa (HEM) structure. We could achieve the low threshold current operation of the QD laser at 7 mA with a high mirror loss of 16 cm-1.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; indium compounds; laser mirrors; optical fabrication; optical losses; quantum dot lasers; semiconductor quantum dots; InAs-In0.25Ga0.75As-GaAs; QD stripe laser; current 7 mA; half-etching-mesa structure; high mirror loss structure; low threshold current operation; quantum dot laser; wavelength 1.3 mum; Current density; Etching; Gallium arsenide; Laser theory; Light scattering; Mirrors; Quantum dot lasers; Scanning electron microscopy; Threshold current; Waveguide lasers; laser; low threshold current oparation; quantum dot;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343393
  • Filename
    5343393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2537679