Title :
Low threshold current operation of 1.3 µm Quantum Dots Laser with high mirror loss structure
Author :
Amano, Takeru ; Sugaya, T. ; Hettiarachchi, R. ; Komori, K. ; Mori, M.
Author_Institution :
Photonics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We have proposed a 1.3-mum QD stripe laser with a half-etching-mesa (HEM) structure. We could achieve the low threshold current operation of the QD laser at 7 mA with a high mirror loss of 16 cm-1.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; laser mirrors; optical fabrication; optical losses; quantum dot lasers; semiconductor quantum dots; InAs-In0.25Ga0.75As-GaAs; QD stripe laser; current 7 mA; half-etching-mesa structure; high mirror loss structure; low threshold current operation; quantum dot laser; wavelength 1.3 mum; Current density; Etching; Gallium arsenide; Laser theory; Light scattering; Mirrors; Quantum dot lasers; Scanning electron microscopy; Threshold current; Waveguide lasers; laser; low threshold current oparation; quantum dot;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343393
