Very high frequency double-ended tuning fork nano-mechanical Fin-FET resonator

Author

Bartsch, S.T. ; Grogg, D. ; Lovera, A. ; Tsamados, D. ; Ionescu, A.M.

Author_Institution

Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne - EPFL, Lausanne, Switzerland

fYear

2011

fDate

5-9 June 2011

Firstpage

938

Lastpage

941

Abstract

We present the very high frequency (VHF) operation of a nano-mechanical double-ended tuning fork resonator (DETF), in which two fin field effect transistors (FinFET) are co-integrated. We benefit from the excellent mixing properties of the FinFET to characterize accurately its fundamental resonance (f₀=113 MHz) and quality factor (Q=1300) and compare these results with clamped-clamped (cc-) beam FinFET resonators of similar dimensions. We find the tuning fork design to be superior in terms of Q-factors, transconductance and available on-current.

Keywords

MOSFET; VHF devices; nanoelectromechanical devices; vibrations; fin field effect transistors; very high frequency double-ended tuning fork nanomechanical Fin-FET resonator; FinFETs; Logic gates; Optical resonators; Resonant frequency; Transconductance; Vibrations; Tuning fork; electromechanical frequency conversion; mixing; nanomechanical; resonant-body transistor; resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969677

Filename

5969677