DocumentCode :
2537690
Title :
Very high frequency double-ended tuning fork nano-mechanical Fin-FET resonator
Author :
Bartsch, S.T. ; Grogg, D. ; Lovera, A. ; Tsamados, D. ; Ionescu, A.M.
Author_Institution :
Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne - EPFL, Lausanne, Switzerland
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
938
Lastpage :
941
Abstract :
We present the very high frequency (VHF) operation of a nano-mechanical double-ended tuning fork resonator (DETF), in which two fin field effect transistors (FinFET) are co-integrated. We benefit from the excellent mixing properties of the FinFET to characterize accurately its fundamental resonance (f0=113 MHz) and quality factor (Q=1300) and compare these results with clamped-clamped (cc-) beam FinFET resonators of similar dimensions. We find the tuning fork design to be superior in terms of Q-factors, transconductance and available on-current.
Keywords :
MOSFET; VHF devices; nanoelectromechanical devices; vibrations; fin field effect transistors; very high frequency double-ended tuning fork nanomechanical Fin-FET resonator; FinFETs; Logic gates; Optical resonators; Resonant frequency; Transconductance; Vibrations; Tuning fork; electromechanical frequency conversion; mixing; nanomechanical; resonant-body transistor; resonator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969677
Filename :
5969677
Link To Document :
بازگشت