Title :
Optically pumped intersubband light emission near 2 µm from GaN/AlN quantum wells
Author :
Driscoll, K. ; Liao, Y. ; Bhattacharyya, A. ; Moustakas, T.D. ; Paiella, R. ; Zhou, L. ; Smith, D.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
Abstract :
Intersubband light emission at record short wavelengths near 2 mum is obtained with GaN/AlN quantum wells, via optical pumping from the ground-state to the second-excited subband followed by radiative relaxation into the first-excited subband.
Keywords :
III-V semiconductors; aluminium compounds; excited states; gallium compounds; ground states; optical pumping; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; first-excited subband; ground state; optical pumping; optically pumped intersubband light emission; photoluminescence; radiative relaxation; second-excited subband; semiconductor quantum wells; Conducting materials; Electromagnetic wave absorption; Gallium nitride; III-V semiconductor materials; Optical materials; Optical pulses; Optical pumping; Photoluminescence; Quantum computing; Stimulated emission;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343394
