Title :
Design of a two watt power amplifier in InGaP/GaAs HBT process for very high linearity wireless applications
Author :
Faiz, Mir ; Earles, Susan K. ; Hou, Bin ; Zhang, Shuyun
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Inst. of Technol., Melbourne, FL, USA
Abstract :
This paper presents the design of a very high linearity two watt power/driver amplifier in InGaP/GaAs Heterojunction Bipolar Transistor (HBT) technology for wireless standards like WCDMA. High linearity was achieved through a novel circuit that minimizes the third order intermodulation distortion component in the output signal. The circuit utilizes the base-collector and base-emitter diode capacitances of a transistor biased in the saturation region to provide a nonlinear feedback path between the output and input of the amplifier. In the 2.14GHz WCDMA band, the amplifier demonstrated 51dBm of output third order intercept point at 17dBm/tone output power level with output 1dB compression point of about 32dBm The amplifier is externally matched, thus provides flexibility to optimize the amplifier across a specific frequency band of interest between 400MHz and 2700MHz.
Keywords :
III-V semiconductors; UHF power amplifiers; bipolar transistor circuits; code division multiple access; gallium arsenide; gallium compounds; indium compounds; integrated circuit design; HBT process; InGaP-GaAs; WCDMA band; base-collector diode capacitances; base-emitter diode capacitances; driver amplifier; frequency 2.14 GHz; frequency 400 MHz to 2700 MHz; frequency band; heterojunction bipolar transistor technology; nonlinear feedback path; power 2 W; power amplifier; saturation region; third order intermodulation distortion component; very high linearity wireless applications; wireless standards; Decision support systems; Power generation; Power measurement; Q measurement; InGaP/GaAs HBT; WCDMA; driver amplifier; linearity; nonlinear feedback; power amplifier;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-1435-1
DOI :
10.1109/MIKON.2012.6233544
