• DocumentCode
    2537758
  • Title

    Design of a two watt power amplifier in InGaP/GaAs HBT process for very high linearity wireless applications

  • Author

    Faiz, Mir ; Earles, Susan K. ; Hou, Bin ; Zhang, Shuyun

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida Inst. of Technol., Melbourne, FL, USA
  • Volume
    1
  • fYear
    2012
  • fDate
    21-23 May 2012
  • Firstpage
    297
  • Lastpage
    299
  • Abstract
    This paper presents the design of a very high linearity two watt power/driver amplifier in InGaP/GaAs Heterojunction Bipolar Transistor (HBT) technology for wireless standards like WCDMA. High linearity was achieved through a novel circuit that minimizes the third order intermodulation distortion component in the output signal. The circuit utilizes the base-collector and base-emitter diode capacitances of a transistor biased in the saturation region to provide a nonlinear feedback path between the output and input of the amplifier. In the 2.14GHz WCDMA band, the amplifier demonstrated 51dBm of output third order intercept point at 17dBm/tone output power level with output 1dB compression point of about 32dBm The amplifier is externally matched, thus provides flexibility to optimize the amplifier across a specific frequency band of interest between 400MHz and 2700MHz.
  • Keywords
    III-V semiconductors; UHF power amplifiers; bipolar transistor circuits; code division multiple access; gallium arsenide; gallium compounds; indium compounds; integrated circuit design; HBT process; InGaP-GaAs; WCDMA band; base-collector diode capacitances; base-emitter diode capacitances; driver amplifier; frequency 2.14 GHz; frequency 400 MHz to 2700 MHz; frequency band; heterojunction bipolar transistor technology; nonlinear feedback path; power 2 W; power amplifier; saturation region; third order intermodulation distortion component; very high linearity wireless applications; wireless standards; Decision support systems; Power generation; Power measurement; Q measurement; InGaP/GaAs HBT; WCDMA; driver amplifier; linearity; nonlinear feedback; power amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
  • Conference_Location
    Warsaw
  • Print_ISBN
    978-1-4577-1435-1
  • Type

    conf

  • DOI
    10.1109/MIKON.2012.6233544
  • Filename
    6233544